网易彩票

      <kbd id='svr5hdf'></kbd><address id='svr5hdf'><style id='svr5hdf'></style></address><button id='svr5hdf'></button>

          High-Quality Hexagonal Nonlayered CdS Nanoplatelets for Low-Threshold Whispering-Gallery-Mode Lasing

          2019-11-28

           

          Author(s): Mi, Y (Mi, Yang); Jin, B (Jin, Bao); Zhao, LY (Zhao, Liyun); Chen, J (Chen, Jie); Zhang, S (Zhang, Shuai); Shi, J (Shi, Jia); Zhong, YG (Zhong, Yangguang); Du, WN (Du, Wenna); Zhang, J (Zhang, Jun); Zhang, Q (Zhang, Qing); Zhai, TY (Zhai, Tianyou); Liu, XF (Liu, Xinfeng)

          Source: SMALL Volume: 15 Issue: 35 Article Number: 1901364 DOI: 10.1002/smll.201901364 Published: AUG 2019

          Abstract: Low threshold micro/nanolasers have attracted extensive attention for wide applications in high-density storage and optical communication. However, constrained by quantum efficiency and crystalline quality, conventional semiconductor small-sized lasers are still subjected to a high lasing threshold. In this work, a low-threshold planar laser based on high-quality single-crystalline hexagonal CdS nanoplatelets (NPLs) using a self-limited epitaxial growth method is demonstrated. The as-grown CdS NPLs show multiple whispering-gallery-mode lasing at room temperature with a threshold of approximate to 0.6 mu J cm(-2), which is the lowest value among reported CdS-based lasers. Through power-dependent lasing studies at 77 K, the lasing action is demonstrated to originate from a exciton-exciton scattering process. Furthermore, the edge length- and thickness-dependent lasing threshold studies reveal that the threshold is inversely proportional to the second power of lateral edge length while partially affected by vertical thickness, and the lasing modes can be sustained in NPLs as thin as 60 nm. The lowest threshold emerges with the thickness of approximate to 110 nm due to stronger energy confinement in the vertical Fabry-Perot cavity. The results not only open up a new avenue to fabricate nonlayered material-based coherent light sources, but also advocate the promise of nonlayered semiconductor materials for the development of novel optoelectronic devices.

          Accession Number: WOS:000483593200011

          PubMed ID: 31282127

          ISSN: 1613-6810

          eISSN: 1613-6829

          Full Text: https://onlinelibrary.wiley.com/doi/full/10.1002/smll.201901364



          關于我們
          下載視頻觀看
          聯系方式
          通信地址

          北京市海淀区清华东路甲35号 北京912信箱 (100083)

          電話

          010-82304210/010-82305052(傳真)

          E-mail

          semi@semi.ac.cn

          交通地圖
          友情鏈接
          中華人民共和國科技技術部
          中國科學院
          中國工程院
          國家自然科學基金委員會
          中國科學院大学
          中國科學技術大學
          中國科學院科技产业网
          版权所有 ? 中國科學院半導體研究所

          备案号:京ICP备05085259号 京公网安备110402500052 中國科學院半导体所声明